Zemana AntiMalware Premium 3.1.320 Crack Serial Key !


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Zemana AntiMalware Premium 3.1.320 Crack Serial Key !

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Zemana AntiMalware Premium 3.1.320 Crack Serial Key! Zemana Anti Malware Premium 3.1.320 Crack Serial Key!A. Field of the Invention
The present invention generally relates to an exposure apparatus, a method for producing a device, and a method for producing an optical element. More particularly, the present invention relates to a so-called scanning exposure apparatus of projection-exposure type, which projects and exposes a pattern on a mask, or a reticle (which is sometimes referred to as a xe2x80x9creticle patternxe2x80x9d, hereinafter) onto a wafer, or the like, via a projection optical system, thereby transferring the pattern. The invention also relates to a method for producing a device, such as a semiconductor integrated circuit, which uses such a scanning exposure apparatus, and a method for producing an optical element which employs such a scanning exposure apparatus.
B. Description of the Related Art
As is well known, in a semiconductor integrated circuit, such as VLSI, etc., minute and complicated circuit patterns are usually formed over a wafer, etc., as a material to be processed, using photolithography. In the recent years, as the dimension of the circuit patterns is becoming finer, various exposure apparatuses have been invented to meet such a requirement. Among them, the scanning exposure apparatus is known as one suitable for obtaining a fine pattern with good dimensional accuracy. The scanning exposure apparatus is being used to form fine resist patterns, etc., in manufacturing processes for semiconductor integrated circuits.
In the manufacturing processes of semiconductor integrated circuits, it is essential to keep the wafer surface as flat as possible to improve the light intensity, the light-focusing performance and the resolution. To be more specific, the wafer surface is kept in a plane as flat as possible by reducing the amount of warp of the wafer.
On the other hand, in the scanning exposure apparatus, if the amount of warp of the wafer is large, the wafer deforms, so that the wafer position in the optical system including the projection optical system, etc., does not coincide with its predetermined position, resulting in exposure accuracy degradation. For this reason, in the scanning exposure apparatus, even if the wafer surface is kept as flat as possible, exposure accuracy degradation is inevitable, depending on the amount of warp of the wafer.
To eliminate the exposure accuracy degradation due to the warp of
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